| LiNbO 3; crystal is widely used as frequency doublers for wavelength >1um an optical parametric oscillators(OPOs) pumped at 1064nm as well as quasi-phase-matched (QPM) devices, Due to its large E-O and A-O coefficients, LiNbO 3; crystal is the most commonly used material for Pockel Cells, Q-switches and phase modulators, waveguide substrate, and surface acoustic wave(SAW) wafers, etc.
FOCtek general general capabilities include providing high quality and large size LiNbO 3; crystal for quasi-phase-matched doublers and waveguide substrate and SAW wafers. |
| Boules: |
| 1) |
Diameter: f 35~76mm |
| 2) |
Length: 100~300mm |
| 3) |
Orientation: 127.86 ¡ãY, 64¡ãY, Y, Z0 |
| 4) |
Ref. Flat Orientation: X or Y |
| Wafers : |
| 1) |
Diameter: f 40.0mm, f 50.8mm, f 76.2mm , f 101.6mm |
| 2) |
Thickness: 0.2~1.0mm |
| 3) |
Orientation: X, Y, Z, 127.86 ¡ãY, 64 ¡ãY, 135 ¡ãY |
| 4) |
Ref. flat orientation: X or Y |
| 5) |
Ref. Flat width: 16¡À 2mm, 18¡À 2mm, 22¡À 2mm, 32¡À 2mm |
| 6) |
Front polish: 0.016 ~0.001 m m |
| 7) |
Back lapping: 0.3 ~10 |
| 8) |
Flatness: ?15 m m |
| 9) |
Bow:
?20¦Ìm for dia <18mm,
?40¦Ìm for dia 22 ~ 32mm |
| Slices(Rectangular) : |
1) |
Size: 300x35x2mm, 150x45x2mm |
2) |
Orientation: Z, X, Y, Z, 127.86 ¡ãY, 64 ¡ãY, 135 ¡ãY |
Others LiNbO 3; crystals series MgO:LiNbO 3; , ZnO:LiNbO 3; , Fe:LiNbO 3; is also available upon customers' request.
Notes
To inquiry or order a finished LiNbO 3; crystals, please specify the specification listed above.
| Physical and Optical Properties |
| Crystal Structure |
Trigonal, space group R 3c |
| Cell Parameters |
a = 5.15, c = 13.863, Z = 6 |
| Melting Point |
1255 +/-5¡æ |
| Curie Point |
1140 +/-5¡æ |
| Mohs Hardness |
5 |
| Density |
4.64 g/cm 3 |
| Absorption Coefficient |
~ 0.1%/cm @ 1064 nm |
| Solubility: |
insoluble in H 2 O |
| Relative Dielectric Constant |
e T11/e 0 : 85
e T33/e 0 : 29.5 |
| Thermal Expansion Coefficients at 25¡æ |
||a, 2.0 x 10 -6 /K @ 25¡æ
||c, 2.2 x 10 -6 /K @ 25¡æ |
| Thermal Conductivity |
38 W /m /K @ 25¡æ |
| Transparency Range |
420 - 5200 nm |
| Refractive Indices |
n e = 2.146, n o = 2.220 @ 1300 nm
n e = 2.156, n o = 2.322 @ 1064 nm
n e = 2.203, n o = 2.286 @ 632.8 m |
| Optical Homogeneity |
~ 5 x 10 -5 /cm |
| Sellmeier Equations( l in m m) |
n o 2 ( l ) = 4.9048+0.11768/( l 2 - 0.04750) - 0.027169 l 2
n e 2 ( l ) = 4.5820+0.099169/( l 2 - 0.04443) - 0.021950 l 2 |
| NLO Coefficients |
d 33 = 34.4 pm/V
d 31 = d 15 = 5.95 pm/V
d 22 = 3.07 pm/V |
| Electro-Optic Coefficients |
gT 33 = 32 pm/V,
gS 33 = 31 pm/V
gT 31 = 10 pm/V, gS31
= 8.6 pm/V
gT 22 = 6.8 pm/V, gS
22 = 3.4 pm/V, |
Half-Wave Voltage, DC
Electrical field ||z, light ^ z
Electrical field ||x or y, light || z |
3.03 KV 4.02 KV |
| Damage Threshold |
200 MW/cm 2 (10 ns) |
|